| 摘要 |
PURPOSE:To provide a semiconductor memory having an optimum layout of polycrystalline thin-film transistors by using a polysilicon layer to connect the thin-film transistors with transistors on a substrate. CONSTITUTION:An SRAM cell using polycrystalline thin-film transistors comprises a diffused region 200, first polysilicon layers NG1, NG2 and WL, and second polysilicon layers VSS, 300, 301 and 302. The second polysilicon layers may be used to connect a third polysilicon layer to the diffused region 200 or the first polysilicon layer. Therefore, the third polysilicon layer is formed independent of the layout of the first polysilicon layer, thus increasing the freedom of layout design of a memory cell. |
