| 摘要 |
PURPOSE: To obtain good mechanical and chemical stability by composing the device of a GaAs substrate, a GaAs buffer layer, a GaAs/AlGaAs quantum-well region, and an AlAs/GaAs clad region. CONSTITUTION: A quantum-well region 5 is formed between a clad region 7 and a grating 9 at a top part, which couples radiation with the quantum-well region 5. The clad region 7 is in contact with the quantum-well region 5 and formed between the quantum well region 5 and a substrate 1. The quantum-well region 5 includes alternate layers 51 and 53 of GaAs and AlGaAs and the clad region 7 includes superlattices 71 and 73 of at least 2μm in thickness, formed of alternate layers of AlAs and GaAs. Further, the substrate 1 and a buffer layer 3 are formed of GaAs. Consequently, good mechanical and chemical stability is obtained.
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