MANUFACATURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of forming a LOCOS region on a semiconductor substrate, forming a first PSG layer and electrode on the overall surface of the substrate and connecting a plating connection line, forming a second PSG layer and insulating layer on the substrate, forming a contact hole on the electrode, removing an aluminum oxide on the surface of the electrode, and forming a bump in the contact hole, thereby directly forming bump on the aluminum pad.