| 摘要 |
<p>PURPOSE:To make it possible to make absorption of light difficult and increase a mobility, by interposing a gate insulating film and installing a gate electrode on one side and installing a semiconductor thin film made of a microcrystalline silicon carbide and source and drain electrodes on the other side. CONSTITUTION:A gate electrode 2 obtained by forming a Ta thin film and performing a patterning is formed on a glass substrate 1. Next, the glass substrate 1 is dipped into an ammonium tartrate solution, and a current is carried from the outside and an anodization is performed, and a gate insulating film 3 made of Ta2O5 is formed on the gate electrode 2. Three layers of a gate insulating film 4, a semiconductor thin film 5 and an etching stopper 6 are formed by an inline type CVD apparatus. After the glass substrate 1 is carried in from a load chamber 12, in an Si3N4 film forming chamber 13, SiH4, NH3 and H2 are introduced and the gate insulating film 4 is formed by a plasma discharge. Subsequently, in an electron cyclotron resonance plasma film forming chamber 14, the semiconductor thin film 5 made of p-type muc-SiC is formed.</p> |
