CAPACITOR PREPARATION OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To reduce leakage currents due to carbon contamination and characteristics deterioration due to TaCl5 contamination by forming a high purity tantalum oxide film. CONSTITUTION: This method is provided with a process for forming a storage electrode by depositing a polycrystalline silicon film 32 doped on a semiconductor substrate 31, a process for forming a silicon oxide film 33 by oxidizing the polycrystalline silicon film 32, and a process for successively forming a tantalum film 34 and a tantalum solidified film 35 on the silicon oxide film 33. Moreover, this method is composed of a process for obtaining the structure of the silicon oxide 33/tantalum oxide film 36/silicon oxide film 37 by annealing and oxidizing the tantalum film 34 and the tantalum solidified film 35, and a process for forming a plate electrode 38 of the doped polycrystalline silicon or other materials on the structure.