| 摘要 |
PURPOSE: To realize a method for thinning a semiconductor wafer by joining a first major surface of a support film to a first major surface of the semiconductor wafer and by thinning the semiconductor wafer to a desired thickness and then by separating the support film from the semiconductor wafer. CONSTITUTION: A support film 15 is joined to a semiconductor wafer 11. The support film 15 supports the semiconductor wafer 11 in a thinning process and protects the front 12 of the semiconductor wafer 11. After the support film 15 is joined to the semiconductor wafer 11, the back surface 13 of the semiconductor wafer 11 is etched in two processes. First, the back surface 13 is mechanically polished and then chemically etched. A metal film 18 may be formed on the back surface 13 by sputtering. The semiconductor wafer 11 having the support film 15 is attached to a tape or frame 20 for a dicing process, and the support film 15 is removed from the front of the semiconductor wafer 11. This can realize a method for thinning the semiconductor wafer and improving the heat dissipation from the semiconductor wafer.
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