| 摘要 |
PURPOSE: To fully ensure the valid area for a capacitor, and to reduce the width of an embedded contact by forming a storage electrode by applying a material capable of wet-etching flattened thick between double fins composed of conductive layers. CONSTITUTION: A first material layer 31 capable of wet etching is formed flat on the entire face of a first conductivity layer 30. A second conductivity layer 34 is formed on the first conductive layer 31, and a photoresist pattern 35 with a constant spread, including contact holes, is formed on the second conductivity layer 34. The second conductivity layer 34, formed at the lower part of the photoresist pattern 35, is etched by using it as a mask, and the first material layer 31 at the lower part of the second conductive layer 34 is wet removed. The first conductive layer, 30 formed under the first material layer 31, is etched by using the photoresist pattern 35 as the etching mask, and the storage electrode of a capacitor formed of the residual first and second conductive layers 30 and 34 is formed. Therefore, possibility of stringers generated at a peripheral circuit part is removed. |
