| 摘要 |
PURPOSE: To provide an MOS-type longitudinal power transistor(TR) which is formed into a semiconductor layer, having a bottom surface and a top surface constituting a 1st electrode. CONSTITUTION: This transistor includes a large number of identical cells connected to a control electrode 6 and a 2nd electrode 3, formed on the top surface in parallel. A power TR includes at least one additional cell 41 to 45, and the cells are formed in a semiconductor layer and has the same shape as identical cells but have smaller lateral sizes than the identical cells, and the power TR includes a circuit for turning on the power TR, when an additional cell reaches an avalanche mode. |
