| 摘要 |
PURPOSE:To prevent damage on the working edge face of various material layer to be laminated by a method wherein, when a plurality of material layers are laminated on a substrate while the layers are being processed successively, the material layers are laminated successively in such a manner that the edge face to be processed outside the circuit pattern forming region is covered by the material layer located directly above it. CONSTITUTION:A SiN insulating film 25 and a positive type photo-resist film 26 are formed successively on the whole surface of a wafer. The position E2 of the stepping of the outermost circumferential side on the surface of the wafer is detected using a detection mechanism. An edge exposing operation is conducted on the region outside the position where a constant offset is added on the position E2. By this exposure, a non-exposure region 26a is formed on the region which completely covers an Al-1% Si layer 23, and an exposure part 26b is formed on the region of the outer circumferential side. Subsequently, a positive photoresist film 26 is developed after a necessary pattern-transfer operation is conducted on the non-exposed part 26a using photolithography technique. |
