| 摘要 |
PURPOSE:To prevent the falling down of pattern by a method wherein, in the developing process of a superfine pattern having a high aspect ratio which is generated by an SR lithography technique and the like, the effect of the surface tension of a rinsing liquid inflicting on a pattern is prevented. CONSTITUTION:In the lithography process in which the prescribed pattern is transferred to the resist pattern 2 coated on the surface of a wafer 1, after the prescribed region 2' of the resist 2 has been exposed to light, a developing solution 3 is dripped on the surface of the resist 2, the desired resist pattern 4 is formed by dissolution-removing either of the photosensitive region and the non-photosensitive region of the resist, and the wafer surface is rinsed by a rinsing liquid 5. Then, the rinsing liquid is frozen (5') in the state wherein the surface of the resist pattern is wet, the surface of the resist pattern is dried up by sublimation under a depressed state, and the desired resist pattern is obtained. |
