发明名称 |
MANUFACTURE OF SEMICONDUCTOR WAFER |
摘要 |
PURPOSE:To provide a GaAs wafer excellent in process accuracy by a method wherein the wafer is corrected in 'warpage' generated in a slice process without deteriorating in thickness dispersion. CONSTITUTION:A semiconductor wafer manufacturing method is provided with a process wherein a semiconductor wafer 1 pasted on a polishing plate after it is sliced and etched is lapped, wherein the semiconductor wafer 1 is pasted on a polishing plate with no pressure after it is sliced and etched. Therefore, a semiconductor wafer is pasted on a polishing plate as it is kept the same in shape after it is sliced and etched. |
申请公布号 |
JPH06224164(A) |
申请公布日期 |
1994.08.12 |
申请号 |
JP19930012011 |
申请日期 |
1993.01.27 |
申请人 |
HITACHI CABLE LTD |
发明人 |
AKIYAMA HIROKI;OZAWA MAKOTO;KOMATA CHIKAFUMI;ONISHI MASAYA |
分类号 |
B24B37/04;B24B37/30;H01L21/304 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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