发明名称 MANUFACTURE OF SEMICONDUCTOR WAFER
摘要 PURPOSE:To provide a GaAs wafer excellent in process accuracy by a method wherein the wafer is corrected in 'warpage' generated in a slice process without deteriorating in thickness dispersion. CONSTITUTION:A semiconductor wafer manufacturing method is provided with a process wherein a semiconductor wafer 1 pasted on a polishing plate after it is sliced and etched is lapped, wherein the semiconductor wafer 1 is pasted on a polishing plate with no pressure after it is sliced and etched. Therefore, a semiconductor wafer is pasted on a polishing plate as it is kept the same in shape after it is sliced and etched.
申请公布号 JPH06224164(A) 申请公布日期 1994.08.12
申请号 JP19930012011 申请日期 1993.01.27
申请人 HITACHI CABLE LTD 发明人 AKIYAMA HIROKI;OZAWA MAKOTO;KOMATA CHIKAFUMI;ONISHI MASAYA
分类号 B24B37/04;B24B37/30;H01L21/304 主分类号 B24B37/04
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