Halbleiterbauelement mit MOS Transitor und dessen Herstellungsverfahren.,申请号DE19916002719-传众专利搜索

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发明名称	Halbleiterbauelement mit MOS Transitor und dessen Herstellungsverfahren.
摘要
申请公布号	DE69102719(D1)	申请公布日期	1994.08.11
申请号	DE19916002719	申请日期	1991.03.08
申请人	FUJITSU LTD., KAWASAKI, KANAGAWA, JP	发明人	SATO, NORIAKI, MACHIDA-SHI, KANAGAWA 194-01, JP
分类号	H01L27/092;H01L21/8238;(IPC1-7):H01L21/82	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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