Light-emitting diode with a double-heterostructure consisting of InGaA1P

摘要

Light-emitting diodes with a double-heterostructure consisting of InGaA1P which are built upon a GaAs substrate have high absorption losses in the substrate. In order to reduce these losses, a InGaA1P diode with a heterostructure is proposed which has a GaP substrate. For lattice adaptation, according to the invention transparent intermediate layers are provided which are built up from the mixed crystal system InGaA1P.