A electron cyclotron resonance apparatus which is capable of producing a cryogenic cooling effect. As a result of a radioactive movement (motion) property of radicals, a side-wall etching of a photoresist can be prevented during the production of integrated micropatterns of the next generation. The apparatus also eliminates mutually contradictory growth/reduction phenomena which arise between the etching rate and the anisotropy as well as between the etching rate and the uniformity of the general etching devices. This not only achieves a desired vertical etching but also a rapid etching rate. It is thus possible to eliminate factors which create a complexity in the process, to be specific by using a conventional three-layer P/R (TLR) or a multi-layer P/R (MTR), and which adversely affect the yield and the productivity.
