| 摘要 |
An integrated rate and acceleration sensor includes at least one accelerometer formed from a substantially planar silicon body. The at least one micro-silicon accelerometer (MSA) includes a first frame and a proof mass suspended from the first frame by first flexures. The at least one accelerometer has an associated sensitive axis and an associated rate axis that is orthogonally disposed to the sensitive axis. The integrated sensor further includes structure for dithering or vibrating the proof mass along a dither axis that is disposed perpendicularly to both the rate and the sensitive axes. The dithering structure includes at least first and second interdigitated electrodes. Finger portions of the electrodes are disposed for exerting an electrostatic force upon a portion of the planar body in response to an oscillatory drive signal. The portion of the planar body has a plurality of linear grooves formed therein, the plurality of linear grooves being disposed in a parallel orientation with the finger portions. A vibrating accelerometer gyro (VAG) structure is constructed by micromachining techniques such that the linear momenta of two vibrating MSAs balance one another. A symmetrical disposition of the vibrating proof masses tends to balance the linear momenta of the MSAs, and increases the resonance amplification factor (Q). |
