| 摘要 |
The present invention relates to a bipolar integrated circuit with N-type compartments (2) formed in a P-type substrate (1), comprising in first compartments, first transistors (EBC) whose compartment constitutes the collector inside which is formed a P-type base region (7) itself containing an N<+>-type emitter region (8). In at least one second compartment forming a collector, a second transistor (E'B'C') consists of a third elementary transistor (E1B1C') comprising regions of the same doping as the first transistors and of a fourth elementary transistor (E2B2C') having a base region (11) with a high level of doping compared with that of the bases of the first transistors and an emitter region (12) of the same level of doping as that of the first transistors. The emitters and the bases of the third and fourth transistors are interconnected and constitute the emitter and the base of the second transistor. <IMAGE> |
