发明名称 Improvements in crystal growth
摘要 PCT No. PCT/GB95/01305 Sec. 371 Date Dec. 20, 1996 Sec. 102(e) Date Dec. 20, 1996 PCT Filed Jun. 6, 1995 PCT Pub. No. WO96/00317 PCT Pub. Date Jan. 4, 1996Homogeneous crystals are grown from a multicomponent melt double crucible assembly with an injector which affords improved flow of melt from the outer to the inner crucible. Guide rods are provided external to the outer crucible and locate the inner crucible with reduced probability of sticking. Means are also provided for withdrawing the inner crucible after crystal growth is complete as is a method of removing trapped gas from the apparatus prior to crystal growth.
申请公布号 GB9412629(D0) 申请公布日期 1994.08.10
申请号 GB19940012629 申请日期 1994.06.23
申请人 SECRETARY OF STATE FOR DEFENCE, THE 发明人
分类号 C30B15/12;C30B35/00 主分类号 C30B15/12
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