发明名称 Process for producing an active flat panel matrix and a RAM using MIM components.
摘要 <p>The process according to the invention comprises the following operations: - a stack is formed of a first material which is an oxidising conductor and of a second material which is an oxidisable conductor and preferably a semiconductor, - this stack is brought to a temperature able to engender a redox reaction between the two materials, this forming an insulating insert layer, - the whole is brought back to ambient temperature. …<??>Application in electronics, in the production of active matrix liquid crystal display screens, or of dynamic RAM memory. …<IMAGE>… </p>
申请公布号 EP0376830(B1) 申请公布日期 1994.08.10
申请号 EP19890403632 申请日期 1989.12.22
申请人 CHAMBRE DE COMMERCE ET D'INDUSTRIE DE PARIS CCIP 发明人 SANGOUARD, PATRICK
分类号 G02F1/136;G02F1/1365;G09F9/30;H01L27/108;H01L27/12;H01L45/00;H01L49/02;(IPC1-7):H01L45/00;H01L21/82 主分类号 G02F1/136
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