摘要 |
<p>The process according to the invention comprises the following operations: - a stack is formed of a first material which is an oxidising conductor and of a second material which is an oxidisable conductor and preferably a semiconductor, - this stack is brought to a temperature able to engender a redox reaction between the two materials, this forming an insulating insert layer, - the whole is brought back to ambient temperature. …<??>Application in electronics, in the production of active matrix liquid crystal display screens, or of dynamic RAM memory. …<IMAGE>… </p> |