| 摘要 |
A half-bridge arrangement for switching electrical power, in the case of which at least two semiconductor switches (14, 21; 15, 20; 16, 19; 17, 18) are connected in series to form a half-bridge (12a; 12b; 12c; 12d). Each semiconductor switch (14, 21; 15, 20; 16, 19; 17, 18) has a control input (G) which is connected to a drive device (23, 24). The source connection (S) of each first semiconductor switch (14; 15; 16; 17) is connected to a high voltage potential (Vss). The drain connection (D) of every other semiconductor switch (18; 19; 20; 21) is connected to a low voltage potential (VDD). In order to form an output connection (A), the drain connection (D) of each of the other semiconductor switches (14; 15; 16; 17) is connected to the source connection (S) of each of the previously mentioned semiconductor switches (18; 19; 20; 21) and at least one capacitor arrangement (30) is arranged between the high and the low voltage potentials (Vss, VDD). In order to improve the emitted power with respect to the volume and the weight of the arrangement, said arrangement is developed such that the drive device (23, 24) drives the semiconductor switches (14, 21; 15, 20; 16, 19; 17, 18) with a control signal at a switching frequency of more than 20 kHz. The capacitor arrangement (30) is formed by at least one flat capacitor (30a) on a board (33) which carries the semiconductor switches (14, 21; 15, 20; 16, 19; 17, 18), and/or by at least one wound capacitor (30b) which is formed as a hollow winding (40), the semiconductor switches (14, 21; 15, 20; 16, 19; 17, 18) being arranged in the wound capacitor (30b) which is formed as a hollow winding (40), and fluid cooling being provided in the hollow winding (40). <IMAGE> |
