Output circuit device for charge transfer element.

摘要

An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage is constructed such that a gate oxide film of a driving side MOS transistor of a first stage source follower which receives signal charge is formed as a thinner film than gate oxide films of the other MOS transistors in the same circuit to reduce the 1/f noise. A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusion layer. Further, a third diffusion layer in which phosphor of a high concentration is formed in the range of the second diffusion layer on the surface of the semiconductor body in a deeper condition than the first diffusion layer is formed. The resisting property against an aluminum spike at a junction between the diffusion layer and a wiring line is improved and an increase of the capacitance of the diffusion layer is suppressed. <IMAGE>