| 摘要 |
PURPOSE:To provide a magnetoresistance effect film enhanced in sensitivity and capable of stably exhibiting a giant magneto-resistance effect by preventing a decrease in the giant magneto-resistance effect due to the anisotropy of the magnetic layer. CONSTITUTION:The anisotropic magnetic field Hk of the magnetic layer and the antiferromagnetic coupled magnetic field Hs between the magnetic layers opposed through a conductor layer are limited to conform to Hk < Hs in this magnetoresistance effect film, or the conductor layer contains 0.05-5 atomic % of Fe, Co and Ni. The thickness (d) of the conductor layer and the thickness dmax of the conductor layer in which the magnetic resistance is maximized are limited to conform to 1.02dmax<=d<=1,10dmax or to 0.90dmax<=d<=0.98dmax. Further, the magnetoresistance effect is produced isotropically in the intrasurface direction of the film. These magnetoresistance effect films are used as the various magnetoresistance effect elements of sensors, etc., and as the magnetized part of the magnetoresistance effect-type magnetic head. |
