Aluminium based metallization for semiconductor device.

摘要

A semiconductor device includes a wiring line formed from an electrode wiring layer (3) which uses, as an electrode material, an A l alloy containing Cu, wherein a wiring line (3-1) having a size smaller than a crystal grain size has a Cu concentration of 0.05 to 0.3 wt%, and a wiring line (3-2) having a size larger than a crystal grain size has a Cu concentration of 0.5 to 10 wt%.