| 摘要 |
PURPOSE:To ensure sufficient capacitor capacitance by a method wherein a thin type capacitor is formed in an opening in one of source-drains from the surface of an interlayer insulating film, and another trench type capacitor is formed in other position of the interlayer insulating film, which capacitors are coupled with each other. CONSTITUTION:A trench 13 is formed in a position on an insulating film 6 which position is different from that of a contact hole 11. A conductor film 16 formed on the bottom surface and the side surface of the trench is connected with a conductor film 15 on the bottom surface and the side surface of the trench in the contact hole 111 by using a conductor film 17 on the surface of the insulating film 6, thus forming a capacitor lower electrode 12. A capacitor dielectric film 7 is formed so as to cover the lower electrode 12, and a capacitor upper electrode 8 is formed so as to cover the dielectric film 7. Thereby the facing area of the upper electrode and the lower electrode is increased, and the capacitance of a capacitor can be ensured. |
