| 摘要 |
PURPOSE:To relax the stress applied to a semiconductor pellet due to wire bonding, by making the thickness of the wire connection part of a wiring pattern wherewith the chip formed in the semiconductor pellet is connected electrically and wherewith an external lead wire is connected larger than the other part of the wiring pattern. CONSTITUTION:The thickness of a wire connection part 7 of a wiring pattern 5 wherewith a chip 3 formed in a semiconductor pellet 1 is connected electrically and wherewith an external lead wire 6 is connected is formed to be larger than the other part of the wiring pattern 5. That is, the thickness of the part 7 to be connected with the chip 3 and wire 6 is so set that the chip 3 is not damaged by the absorption of the load in the case of wire bonding, and the thickness of the other part of the wiring pattern wherefrom the part 7 is excluded is so set that it is not separated from the pellet 1 by a temperature cycling test. By virtue of this configuration, even when the stress caused by the difference between the thermal expansion coefficients of the wiring pattern and the semiconductor pellet resin is applied to the wiring pattern, the wiring pattern is hard to separate from the pellet 1 since it is set thin and the stresses applied to its step parts are made small. |
