| 摘要 |
PURPOSE: To manufacture a wafer with a large surface area with a single-crystal SiC layer by carbonating an Si substrate before growing the single-crystal SiC on the Si substrate and then depositing a polycrystalline SiC layer on the single-crystal SiC layer and etching the Si substrate. CONSTITUTION: A single-crystal silicon substrate 1 is arranged in a substrate holder 2 and is heated in a chamber. The surface of the silicon substrate 1 is carbonated and a nucleus formation layer 3 is formed and then a single- crystal SiC layer 4 is deposited by hetero epitaxial growth. Then, a polycrystalline SiC layer 5 is deposited on the singlecrystal SiC layer 4. A composite of the single-crystal Si substrate 1 including the nucleus formation layer 3 and the single-crystal SiC layer 4 and the polycrystalline SiC layer 5 is cooled and the single-crystal Si layer 1 is eliminated by a wet, chemical means. The singlecrystal silicon carbide layer 6 is further grown on the first single-crystal silicon carbide layer 4, thus forming a composite of the polycrystalline silicon carbide layer 5, the first single-crystal silicon carbide layer 4, and the second single-crystal silicon carbide layer 6 with less defect. |
