| 摘要 |
PURPOSE:To eliminate the factors hindering the high density in a multilayer interconnection construction and provide the multilayer interconnection construc tion and its formation method to realize the high density by dispersing through- holes for connecting respective wirings in a first and second wiring layers. CONSTITUTION:The wirings 11 to 17 for connecting chips 1 and 2 and the wirings 41 to 47 connected with a chip 3 are connected with wirings 21 to 27 through through-holes 31 to 37 and 51 to 57, and the connection among the chips 1 to 3 is carried out in the same order in a manner that the through-holes may not be adjoined each other obliquely, further a through-hole pattern is designed to arrange any one wiring between an optional through-hole and a through-hole adjoining to the periphery. |
