| 摘要 |
PURPOSE: To provide a SRAM memory structure, wherein two load resistors used in SRAM are balanced with each other and have a relatively high resistance value. CONSTITUTION: This semiconductor integrated circuit consists of a substrate 1, a plurality of semiconductors 13, 15 formed on the substrate 1, a plurality of load resistors 23 containing silicon, a dielectric layer 21 formed between the load resistors 23 and the substrate 1, a first dielectric layer 24 formed on the plurality of the load resistors 23, and a metallic layer 27 formed on the first dielectric layer 24. The metallic layer 27 is formed such that the surface area of the load resistors 23 is almost entirely covered. With this constitution, the two (left and right in the figure) load resistors 23 are balanced with each other at a high resistance value. |
