发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To provide a highly reliable semiconductor device, which can decrease the dispersion in reliability without sacrificing other performances by making the thickness of brazing filler material uniform. CONSTITUTION:An insulating substrate 4b, wherein electrodes are treated, is arranged on a metal base 2. A semiconductor element 1 is laminated and arranged on the substrate 4b. The respective parts are bonded with brazing filler material 5. In this semiconductor device, fine particles 8, whose diameter is smaller than the thickness of the brazing filler material, are contained in the brazing filler material by 30% or less. This is the semiconductor device, which is made of this brazing filler material.
申请公布号 JPH06216167(A) 申请公布日期 1994.08.05
申请号 JP19930007326 申请日期 1993.01.20
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 YAGIHARA TOSHIKI;FUJII MASAMI;KUROSU TOSHIKI
分类号 H01L21/52;H01L23/12;(IPC1-7):H01L21/52 主分类号 H01L21/52
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