SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To simplify a connection step and minimize a cell area by forming a second conductive layer on a part of conductive material pad where etching barrier material is not formed and on a part of the etching barrier material. CONSTITUTION: The device comprises a first conductive layer 3 formed at a predetermined portion of a semiconductor substrate 1, a conductive material pad 5' connected to the first conductive layer 3, and a second conductive layer 7' connected via the conductive material pad 5' to the first conductive layer 3. The device further comprises etching barrier material 9 formed on the conductive material pad 5' at a predetermined portion above a contact hole region. The second conductive layer 7' is formed on a part of the conductive material pad 5' where the etching barrier material 9 is not formed and on a part of the etching barrier material 9. The first conductive layer 3 and the second conductive layer 7' are a drain electrode and a bit line. The drain electrode and the bit line are connected via the conductive material pad 5'.