| 摘要 |
PURPOSE: To provide a semiconductor memory of such structure that leakage current caused by p-n junction is prevented, and further manufacture is so simplified that highly accurate mask alignment during manufacture is unnecessary, and a method for its manufacture. CONSTITUTION: A semiconductor memory cell 72 has a groove 81, containing an insulating film 74 used as the dielectric of a memory capacitor, and MOSFET 80 formed through a process for single-crystallizing a polysilicon film 85 on the insulating film 74. The grooves are insulated from each other by the insulating films 74, and further the MOSFETs used are of SOI structure. Thereby leakage current is reduced, and further a structure, which dispensed with highly accurate mask alignment and allows higher degrees of integration, is obtained. |
