发明名称 |
ACTIVE MATRIX DISPLAY ELEMENT |
摘要 |
<p>PURPOSE:To provide the display element of a large size and high definition formed with wirings by using transparent conductive films having low resistivity. CONSTITUTION:Redundancy structure wirings 15 of source wirings 12 and transparent conductive films, such as pixel electrodes 14, are formed of a two-layered structure in which the lower layer is an ITO film 16 and an ITO nitride film 17 is formed as the upper layer thereof. A gate insulating film 5 formed by using SiNx does not come into contact with the ITO nitride film 17 by this structure. Then, the nitrogen incorporated into the ITO nitride film 17 does not react with the SiNx.</p> |
申请公布号 |
JPH06214245(A) |
申请公布日期 |
1994.08.05 |
申请号 |
JP19930007969 |
申请日期 |
1993.01.20 |
申请人 |
SHARP CORP |
发明人 |
NAKADA YUKINOBU;NISHIOKA YUKIYA;OTOKOTO HIDENORI;HIRATA TSUGUYOSHI;NAGAYASU TAKAYOSHI;KATAYAMA MIKIO |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L29/78;H01L29/786;(IPC1-7):G02F1/134;H01L29/784 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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