| 摘要 |
<p>PURPOSE:To obtain a semiconductor device having the flat surface without performing any special flattening process by providing at least one recess part beneath a wiring connecting a passive element or an active element. CONSTITUTION:In a semiconductor device, a passive element and an active element are provided on a substrate, wherein a thin-film, semiconductor layer is provided on an insulating layer or an insulating substrate. At least one recess part is provided beneath a wiring 6 connecting the passive element or the active element in the semiconductor device. For example, on semiconductor substrate of Si, GaAs or the like or on an the insulating substrate 1 of glass, saphire or the like, an insulating layer 2, a first insulating layer 3, a second insulating layer 7 and a third insulating layer 4 of SiO2, SiN, SiON or the like are formed. The third insulating layer 4 is etched, and the recess part is formed. At this time, the second insulating layer 7 and the third insulating layer 4 are made of the different materials. When the third insulating layer 4 is etched, the second insulating layer 7 becomes the stopper. The wiring layer 6 is formed in the recess part, and a fourth insulating layer 5 is formed on the layer 6.</p> |
