发明名称 HIGH EFFICIENCY N-CHANNEL CHARGE PUMP
摘要 <p>PURPOSE: To achieve an efficiency of about 40% by generating 2VCC-Vt N (VCC is power supply voltage, Vt N is threshold voltage) at a node using a subcharge pump circuit and pumping a capacitive load using a main charge pump circuit. CONSTITUTION: The inventive charge pump comprises a subpump including elements shown in block 10, and a main pump including elements not shown in block 10 and connected to receive six types of clock signal CP1-CP6. Nodes 13, 24, 26, 36, 40, 48 and 58 follow clock pulses CP1, CP2, CP3, CP5, CP4, CP6 and CP1, respectively, and operate between VCC and 2VCC. As a result, the main charge pump can pump up to the theoretical maximum level of the VCC while keeping an efficiency of 40% through the subcharge pump.</p>
申请公布号 JPH06217527(A) 申请公布日期 1994.08.05
申请号 JP19930249254 申请日期 1993.10.05
申请人 NITTETSU SEMICONDUCTOR KK;UNITED MEMORIES INC 发明人 MAIKERU BUI KOODOBA;KIMU SHII HAADEII
分类号 G11C11/407;G11C5/14;G11C16/06;G11C17/00;H02M3/07;H03K19/094;(IPC1-7):H02M3/07 主分类号 G11C11/407
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