| 摘要 |
<p>PURPOSE:To obtain excellent operation characteristics, wherein the electric connection between an amorhous silicon thin film whose resistance is made low by ion implantation and a source electrode and a drain electrode is secured, by performing the ion implantaion and the like under the state wherein an inorganic protective film is formed on the amorphous silicon thin film. CONSTITUTION:An inorganic protecting film 15 comprises the laminated structure of an upper layer 15b and a lower layer 15a having the different etching speeds with respect to specified etching liquid. The etching speed of the upper layer 15b is quicker than that of the lower layer 15a closer to an amorphous silicon thin film 14. The inorganic protective film 15 is formed on the amorphous silicon thin film 14. Then, the upper layer 15b in the inorganic protecting film 15 is etched out into the specified pattern. The lower layer 15a is made to remain. With the inorganic protective film 15 as an implantation stopper, ion species containing impurity element ions are implanted into the amorphous silicon thin film 14. Thus, a low-resistance semiconductor layer 17 is formed. Thereafter, the lower layer 15a of the inorganic protecting film 15 is etched away in the specified pattern. Then, e.g. an electrode material is formed, shaping is performed and a source electrode 18a and a drain electrode 19 are formed.</p> |
