WORD-LINE DRIVE CIRCUIT OF A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To improve the integrated level by simple layout by directly applying the voltage of a supply voltage edge to a word line. CONSTITUTION: A word line boost signalϕXi is not directly applied to a word line WL so that the line WL is enabled at a high speed, and a high voltage can be directly supplied from a first supply voltage Vpp to the line WL. A control signal to a decoding part 100A is simply pre-decoded line address signals DRAij, DRAkl, and DRAmn, and a circuit operation is enabled so that delay and the deterioration of a timing margin can be prevented by the enable sequence of an input signal. Also, the signal line load problem of a precharge control signal, the inverse of PC can be canceled, and also a noise problem can be solved by using a Quiet-Vss edge in a word line outputting part 100D. Thus the integrated level can be improved by simple design or layout.