| 摘要 |
PURPOSE:To obtain a nonvolatile semiconductor storage device capable of reducing program time. CONSTITUTION:The following are provided; an X decoder 4 which decodes an address signal inputted from the outside and selects rows, a Y decoder 5 which decodes the address signal and selects columns, a memory cell array arranged in the row direction and the column direction in which data from the outside are written on the basis of the output of the decoders 4 and 5, and a control circuit 14A which judges whether it is necessary for all of the data to be written in the memory cell array. When it is not necessary for all of the data to be written in the memory cell array, the data writing and the data writing confirmation are omitted. |
