| 摘要 |
<p>PURPOSE: To improve deposited step coverage or increase the sinking of a deposited contact hole by performing hydrogen processing on the surface of a lower support film, hydrogen terminating the surface, and forming a first conductive layer by depositing first conductive material. CONSTITUTION: A wiring-layer lower support film 23 is formed on a semiconductor substrate 21. Then, hydrotreating processing is performed to expose the lower support film 23 to hydrogen plasma and hydrogen radicals, and a surface part 26 of the lower support film 23 is hydrogen-terminated. After the hydrogen termination, a first conductive layer 27 is formed on the lower support film 23 by vapordepositing first conductive material on the lower support film 23. In this case, the lower support film 23 is an insulating film including an opening. The opening is a tapered contact hole 24 electrically connecting the wiring layer to an impurity doping region. The size of the contact hole 24 is represented by an average diameter value of the tapered contact hole. By the hydrotreating on the lower support film 23, wettability between the deposited metal layer and the lower support film 23 is improved.</p> |
