| 摘要 |
A reflection type photomask includes a substrate (25), and a reflecting surface (15) formed on the substrate and including a first region (2, 16, 21) and a second region (3, 18, 24) which have a relative height difference. Due to the concavo-convex structure of the reflecting surface, a light reflected from the first region and a light reflected from the second region have a predetermined phase difference which may be used effectively to form a pattern on a photoresist layer. <IMAGE> |
