| 摘要 |
Positive-working, etch-resistant, highly viscous photoresist for photolithographic prodn. of microstructures contains 3,4,5-tris- (1',2'-naphthoquinone- 2'-diazido-5'-sulphonyloxy)- alkoxycarbonyl benzene of formula (I) as light sensitive component, a novolak of formula (II), obtd. by acid catalysed condensn. of o-cresol and p-tert.-butylphenol (III) with HCHO as polymeric binder, (III) as additive, and a ketone, ester, ether, aromatic, lactone or mixt. of these as solvent.The photoresist contains 20-60 (wt.)% solids, with 15-35% (I) and 3-8% (III) w.r.t. total solids. n is 4-10.
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| 申请人 |
BENDIG, JUERGEN, DR., O-1156 BERLIN, DE;HELM, SIEGRUN, DR., O-1017 BERLIN, DE;GRUETZNER, GABY, O-1143 BERLIN, DE;MISCHKE, HELGE, O-1197 BERLIN, DE;MAERTEN, BIRGIT, O-1162 BERLIN, DE;SCHIRMER, MATTHIAS, O-1142 BERLIN, DE |
发明人 |
BENDIG, JUERGEN, DR., O-1156 BERLIN, DE;HELM, SIEGRUN, DR., O-1017 BERLIN, DE;GRUETZNER, GABY, O-1143 BERLIN, DE;MISCHKE, HELGE, O-1197 BERLIN, DE;MAERTEN, BIRGIT, O-1162 BERLIN, DE;SCHIRMER, MATTHIAS, O-1142 BERLIN, DE |
