发明名称 |
Method for forming crystal and crystal article obtained by said method |
摘要 |
A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (NDL) than the nucleation density (NDS) of said nonnucleation surface (SNDS), thereby growing a single crystal from said single nucleus. |
申请公布号 |
AU651805(B2) |
申请公布日期 |
1994.08.04 |
申请号 |
AU19910070263 |
申请日期 |
1991.02.04 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
JINSHO MATSUYAMA;AKIRA SAKAI;MASAO UEKI;YUTAKA HIRAI |
分类号 |
C23C16/04;C23C16/24;C23C16/44;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):C30B25/04;H01L27/12;C30B29/42;C30B29/66;C30B29/52;C30B29/02;C30B29/40;C30B29/06;H01L21/203 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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