| 发明名称 |
OVERETCHING METHOD OF SEMICONDUCTOR SUBSTRATE |
| 摘要 |
The overetching method of semiconductor substrate is disclosed wherein damage of wafer is cured or the wafer surface is cleaned using a overetching solution formed of HNO3, HF, H2O2 and H2O, thereby controlling the etch rate easily.
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| 申请公布号 |
KR940007065(B1) |
申请公布日期 |
1994.08.04 |
| 申请号 |
KR19910022143 |
申请日期 |
1991.12.04 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, TAE - HUN;KIM, YONG - KWAN;KO, YONG - SON;AN, SONG - KYU |
| 分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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