| 摘要 |
<p>A method of semiconductor fabrication having applicability to forming contacts to sources and drains especially in SRAM applications is disclosed. A dielectric (e.g., 127) and an overlying polysilicon conductor (e.g., 131) are formed and patterned thereby exposing a semiconductor substrate (e.g., 123). A silicide layer (e.g., 132) is deposited, thereby contacting the polysilicon layer (e.g., 131) and the substrate (e.g., 123). Subsequent patterning of the silicide layer (e.g., 132) using an oxide hard mask provides electrical contact between the polysilicon layer (e.g., 131) and the substrate without the risk of trenching into the substrate (e.g., 123). <IMAGE></p> |
