发明名称 |
Driving circuit for a field effect transistor in final semibridge stage. |
摘要 |
<p>A drive circuit for a field-effect transistor (MFET1) which has a drain terminal connected to the positive pole (+Vcc) of the power supply and a source terminal connected to a load (OUT). The circuit has circuit means for turning off the field-effect transistor (MFET1) which comprises a first transistor (M1) connected between the gate terminal of the field-effect transistor (MFET1) and the negative pole (GND) of the power supply. Said first transistor (MFET1) is driven by an operational amplifier (M3,M4,MR1,MR2,MR3) which has inverting and non-inverting terminals connected to the gate and source terminals of the field-effect transistor (MFET1) respectively. <IMAGE></p> |
申请公布号 |
EP0608667(A1) |
申请公布日期 |
1994.08.03 |
申请号 |
EP19930830034 |
申请日期 |
1993.01.29 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L.;CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
PULVIRENTI, FRANCESCO;GARIBOLDI, ROBERTO |
分类号 |
H03K17/16;H03K17/0412;H03K17/0414;H03K17/687;H03K17/695;(IPC1-7):H03K17/687 |
主分类号 |
H03K17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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