发明名称 Driving circuit for a field effect transistor in final semibridge stage.
摘要 <p>A drive circuit for a field-effect transistor (MFET1) which has a drain terminal connected to the positive pole (+Vcc) of the power supply and a source terminal connected to a load (OUT). The circuit has circuit means for turning off the field-effect transistor (MFET1) which comprises a first transistor (M1) connected between the gate terminal of the field-effect transistor (MFET1) and the negative pole (GND) of the power supply. Said first transistor (MFET1) is driven by an operational amplifier (M3,M4,MR1,MR2,MR3) which has inverting and non-inverting terminals connected to the gate and source terminals of the field-effect transistor (MFET1) respectively. &lt;IMAGE&gt;</p>
申请公布号 EP0608667(A1) 申请公布日期 1994.08.03
申请号 EP19930830034 申请日期 1993.01.29
申请人 SGS-THOMSON MICROELECTRONICS S.R.L.;CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO 发明人 PULVIRENTI, FRANCESCO;GARIBOLDI, ROBERTO
分类号 H03K17/16;H03K17/0412;H03K17/0414;H03K17/687;H03K17/695;(IPC1-7):H03K17/687 主分类号 H03K17/16
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