发明名称 Voltage controlled integrated circuit for biasing an RF device.
摘要 <p>The present invention is directed to a voltage controlled single-package integrated circuit device, capable of thermal compensation, for biasing a quasi-linear bipolar device. The bias circuit also provides a low impedance source to a RF device so that the bias point does not dynamically change with the RF signal, thus improving linearity. Changes in the base-emitter voltage level of the RF device are monitored by a reference diode to provide automatic temperature compensation. The reference diode is in close thermal proximity to the RF device, allowing for accurate thermal tracking. The base-emitter voltage may be electronically adjusted by means of a control voltage input, such being suitable for hook-up to a computer system having a digital to analog convertor thereby allowing for fine voltage adjustments. The control voltage may also be used to adjust the class of operation of the RF device or provide external temperature control. &lt;IMAGE&gt;</p>
申请公布号 EP0609053(A2) 申请公布日期 1994.08.03
申请号 EP19940300546 申请日期 1994.01.25
申请人 STMICROELECTRONICS, INC. 发明人 GREEN, RONALD P.
分类号 G05F3/22;H03F1/02;H03F1/30;H03F3/19;(IPC1-7):H03F1/30 主分类号 G05F3/22
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