| 摘要 |
A thin-film transistor panel comprises an insulative substrate, a plurality of thin-film transistor elements arranged at predetermined intervals on said substrate, and wirings electrically connecting the thin-film transistor elements characterized in that the thin-film transistor element comprises a gate electrode, a gate-insulating film, an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween, an n-type semiconductor layer, source and drain electrodes electrically connected the portions of the i-type semiconductor layer through the n-type semiconductor layer, and an anodically oxidized film located between the source and drain electrodes to electrically isolate, said source and drain electrodes.
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