发明名称 Overvoltage sensor with hysteresis
摘要 First and second resistors are connected in series with a Zener diode between first and second points of operating potential. The base-to-emitter of an NPN transistor is connected across the first resistor to sense the current through the series path. The collector-to-emitter of a PNP transistor is connected across the second transistor, whereby when the PNP transistor is turned-on hard and into saturation, the voltage drop across the second transistor decreases. The collector of the NPN transistor is connected to the base of the PNP transistor, whereby when an overvoltage condition exists and the Zener diode breaks down, the two transistors are driven regeneratively and form a latch and the operating point of the circuit is shifted.
申请公布号 US5335132(A) 申请公布日期 1994.08.02
申请号 US19910716488 申请日期 1991.06.17
申请人 HARRIS CORPORATION 发明人 DESHAZO, JR., THOMAS R.
分类号 G01R19/165;G05F1/571;H02H3/20;(IPC1-7):H02H3/20 主分类号 G01R19/165
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