| 摘要 |
A magnetron sputtering apparatus which includes a vacuum chamber, a plurality of sputtering guns, arranged in the vacuum chamber, for emitting sputter particles, a support member for supporting an object to be processed, on which a thin film is to be formed within the vacuum chamber, and a movement mechanism for moving the sputtering guns and the support member relative to each other, wherein sputter particles sputtered from the target by the plasma produced in the recess are deposited on the object to be processed. Each sputtering gun includes a target having a recess, a sputtering gas supplying pass for supplying a sputtering gas into the recess, an electric field producing mechanism for producing an electric field in the recess, thereby generating a plasma of the sputtering gas, and a magnetic field producing mechanism for production, in the recess, of a magnetic field including a component which crosses the electric field at right angles.
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