发明名称 |
High voltage negative charge pump with low voltage CMOS transistors |
摘要 |
An improved negative charge pump system for erasing a memory array in a memory which has a supply voltage and a negative charge pump. The negative charge pump system includes (a) a device for selecting a memory array to be erased; (b) a device for switching on the supply voltage Vnn for the charge pump; (c) a device for pumping the supply voltage Vnn with the charge pump to produce a pumped negative voltage; (d) a device for erasing the selected array with the pumped negative voltage; (e) a device for stopping the pumping; and (f) a device for providing a discharge path for voltages trapped in the charge pump.
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申请公布号 |
US5335200(A) |
申请公布日期 |
1994.08.02 |
申请号 |
US19930000756 |
申请日期 |
1993.01.05 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
COFFMAN, TIM M.;LIN, SUNG-WEI |
分类号 |
G11C5/14;G11C16/14;G11C16/30;(IPC1-7):G11C7/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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