发明名称 High voltage negative charge pump with low voltage CMOS transistors
摘要 An improved negative charge pump system for erasing a memory array in a memory which has a supply voltage and a negative charge pump. The negative charge pump system includes (a) a device for selecting a memory array to be erased; (b) a device for switching on the supply voltage Vnn for the charge pump; (c) a device for pumping the supply voltage Vnn with the charge pump to produce a pumped negative voltage; (d) a device for erasing the selected array with the pumped negative voltage; (e) a device for stopping the pumping; and (f) a device for providing a discharge path for voltages trapped in the charge pump.
申请公布号 US5335200(A) 申请公布日期 1994.08.02
申请号 US19930000756 申请日期 1993.01.05
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 COFFMAN, TIM M.;LIN, SUNG-WEI
分类号 G11C5/14;G11C16/14;G11C16/30;(IPC1-7):G11C7/00 主分类号 G11C5/14
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