发明名称 TITANIUM NITRIDE SPUTTERING TARGET
摘要 PURPOSE:To provide a titanium nitride sputtering target hardly generating particles at the time of sputtering and capable of stably forming a high quality titanium nitride film. CONSTITUTION:This titanium nitride sputtering target is made of a bonded body of titanium nitride particles formed by sintering and nitriding Ti particles and pores having 5-20mum average diameter exist in this target by 100-500 per 1mm<2> area, or pores having 5-20mum average diameter exist in this target by 100-500 per 1mm<2> area and the ratio of the average particle diameter of the titanium nitride particles to the average diameter of the pores is 1-100. The pores and the titanium nitride particles are controlled by regulating Ti powder as starting material, sintering conditions, etc.
申请公布号 JPH06212418(A) 申请公布日期 1994.08.02
申请号 JP19920129671 申请日期 1992.04.22
申请人 JAPAN ENERGY CORP 发明人 SAWADA SUSUMU;FUJIOKA MASAAKI;OHASHI TAKEO;KANANO OSAMU
分类号 C04B35/58;C23C14/34 主分类号 C04B35/58
代理机构 代理人
主权项
地址