发明名称 |
High dielectric constant capacitor and method of manufacture |
摘要 |
A high storage capacity capacitor for a semiconductor structure includes a barrier layer formed on a polysilicon electrode, a lower electrode, a dielectric layer, and an upper electrode. The dielectric material is formed of a high dielectric constant material such as BaSrTiO3. In order to protect the barrier layer from oxidation during deposition of the dielectric layer and to provide a smooth surface geometry for depositing the dielectric layer, conducting or insulating spacers are formed on the sidewalls of the barrier layer and lower electrode. A smooth dielectric layer can thus be formed that is less susceptible to current leakage. In addition, the insulating spacers can be formed to completely fill a space between adjacent capacitors and to provide a completely planar surface.
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申请公布号 |
US5335138(A) |
申请公布日期 |
1994.08.02 |
申请号 |
US19930017385 |
申请日期 |
1993.02.12 |
申请人 |
MICRON SEMICONDUCTOR, INC. |
发明人 |
SANDHU, GURTEJ;FAZAN, PIERRE |
分类号 |
H01L21/02;H01L27/108;(IPC1-7):H01G1/01;H01L27/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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